The Taiwanese compound semiconductor foundry WIN Semiconductors has launched a 0.12 μm gate-length depletion-mode (D-mode) GaN HEMT technology on SiC substrates. Engineered for demanding high-power ...

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WIN Semiconductors Corp announces the launch of its NP12-1B, a groundbreaking 0.12 μm gate-length depletion-mode (D-mode) Gallium Nitride (GaN) High Electron Mobility ...

Engineered for demanding high-power applications across K-Band to V-Band frequencies, NP12-1B delivers high power front end solutions with exceptional linearity, ruggedness, and reliability for ...

TAO YUAN, TAIWAN, June 4, 2025 /EINPresswire.com/ -- WIN Semiconductors Corp (TPEx:3105), a leader in advanced semiconductor solutions and the world’s largest pure ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies WIN Semiconductors ...

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Taiwanese pure-play foundry WIN Semiconductors has announced the beta release of its robust mmWave GaN-on-SiC technology, NP12-0B. At the core of this platform is a 0.12-µm gate RF GaN HEMT process ...