Abstract: Insulated gate bipolar transistor (IGBT) module is prone to the along-surface discharge at the silicone gel-metal electrode-AlN ceramic substrate, that is, the “triple bonding point,” ...
Biosciences Division and Center for Molecular Biophysics, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback